Despite years of research, there are still significant gaps in the ability to predict how radiation affects and damages electronic materials and the electrical properties and performance of semi-conductors.
“Because of the huge variety of devices with very different properties, it is hard to implement an effective general model to quantify the effects of radiation on electronic materials,” said Ettore Vittone, a researcher from the University of Torino. “The results of the CRP will help us better understand the effects of energetic radiation in electronic materials and improve their quality and durability for long-term use.”
The new methodology takes into account both the immediate and long-term effects of damage on electronic materials and devices working in harsh radiation environments, said Aliz Simon, a nuclear physicist at the IAEA and coordinator of the CRP. “The performance of a detector used to measure radiation from a radiotherapy device, for example, will deteriorate over time. Knowing when its performance starts to decline will help conduct safe irradiation for cancer therapy,” she said.
The new methodology is based on a model that groups existing techniques for investigating radiation effects on semi-conductor devices.