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Conference Article: Quantitative analysis of trace amounts of impurities contaminating pure graphite with ICP-MS and metal atomizer FLAAS

Abstract

Graphite has excellent properties for the moderator or reflector of the high temperature gas-cooled reactor. In semi-conductor engineering, graphite is also available widely. For these applications the determination of the extremely low impurity level for graphite is one of the most important problems. Using an inductive coupled plasma mass spectrometer, the impurity level of elements Li, B, Na, Mg, Al, Ti, V, Cr, Fe, Mn, Ni, Co, and Zn were analyzed. Using a metal atomizer-flameless atomic absorption spectrophotometer the impurity level of K, Ca and Cu were analyzed. The highly purified graphite (IG-110) manufactured by Toyo Tanso was used for the sample. It was found that the quantitative analysis of a trace amount of impurities in graphite with high sensitivity is possible with these analyzing methods.

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Reference:

Specialists' meeting on the status of graphite development for gas cooled reactors. Tokai, Ibaraki (Japan). 9-12 Sep 1991

International Atomic Energy Agency, Vienna (Austria)

IAEA-TECDOC--690, pp:304-308